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  • Session 1: Plenary I
  • Fumimasa Horikiri

    Sciocs Company Ltd.
    Dr. Fumimasa Horikiri received his BS, MS, and Ph.D. degrees in ME, all from Tohoku University in Japan. He joined Sciocs Company Limited in 2009. His initial focus was on the development of device fabrication process for compound semiconductors, especially lead-free piezoelectric films for MEMS. In 2014 he moved to the GaN epi-wafer engineering section, where he has been working on the device fabrication and epi characterization for GaN-on-GaN power devices and GaN-on-SiC RF devices.