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Session 1: Plenary I
Jie Hong Ng
University of Fukui
Jie H. Ng is currently pursuing M.S. degree in Electrical and Electronic Engineering at University of Fukui, Fukui, Japan. His current research interests include device fabrication and physics of GaN-based transistors. He enjoys playing basketball and reading science fiction.
- Wednesday May 18, 2016 4:30 PM - Wednesday May 18, 2016 4:50 PM 8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm