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  • Session 1: Plenary I
  • 5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures

    Wednesday May 18, 2016 9:10 AM - Wednesday May 18, 2016 9:30 AM

    Tuttle

    Saturation effect of C doping on the vertical leakage current of AlN/AlGaN/GaN heterostructures is investigated. Material properties, studied using secondary ion mass spectrometry (SIMS) and atom probe tomography (APT), have been used to understand vertical leakage current behavior. For the purpose of this study, vertical blocking voltage is defined as the voltage that gives a specific current density (10 µA/mm2). At low C-densities, the thickness normalized blocking voltage increases linearly with increasing C-concentration, with saturation occurring for high C-concentrations above ~1019 cm-3. Interestingly, APT results show that the voltage saturation does not coincide with the onset of C- clustering.

    5b.3 Effect of Carbon Doping on the Voltage-Blocking Properties of AlN/AlGaN/GaN Heterostructures