A single link to the first track to allow the export script to build the search page
  • Session 1: Plenary I
  • 6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers

    Wednesday May 18, 2016 11:40 AM - Wednesday May 18, 2016 12:00 PM

    Flagler & Monroe

    In this paper, we present a cost-efficient wafer support system for thin wafer handling of silicon carbide (SiC) device wafers by using a low-stress temporary bonding material and a glass carrier with a coefficient of thermal expansion (CTE) matched to that of a SiC wafer in place of a traditional sapphire or SiC carrier. The ability of the glass manufacturer to adjust the CTE of a glass carrier to match that of the different device substrates is one of the key factors that allow implementation of glass carriers for this application. Using this carrier technology for thin wafer handling has several advantages. Here, we present some of the key elements for showcasing the compatibility of glass carriers with III-V device manufacturing, including a comparison of CTE-matched glass across the different III-V semiconductor substrates, the ability of the glass to survive various backside processes that are encountered in compound semiconductor device manufacturing, and the compatibility of glass wafers with an array of debonding methods.

    6a.5 Temporary Bonding for Backside Processing of 150-mm SiC Wafers