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  • Session 1: Plenary I
  • 10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers

    Thursday May 19, 2016 11:00 AM - Thursday May 19, 2016 11:20 AM

    Flagler & Monroe

    We report a study of Vanadium (V)-based ohmic contact on Al-rich n-AlGaN films using the transfer length measurement (TLM) and x-ray photoemission spectroscopy. The V-based ohmic contact shows lower contact resistance, smoother surface morphology, and lower annealing temperature when compared to the Ti-based ohmic contact. With the formation of the nitrogen-vanadium bond after the thermal annealing, the N:1s core-level peak at the V-Al0.55Ga0.45N interface was shifted by 0.7 eV toward the higher binding energy. The interface states help the surface pinning of the Fermi level that further facilitates the current conduction for the n-type AlGaN ohmic contact. The data demonstrated that the use of V as the first layer of the n-type ohmic contact for Al-rich n-AlGaN could be a better choice of ohmic contact metal than the conventional Ti/Al-based ohmic contact.

    10a.3 Vanadium-based Ohmic Contact on n-type AlGaN Layers